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KETEK GmbH si-drift diode detector
Si Drift Diode Detector, supplied by KETEK GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/si+drift+diode+detector/si+drift+diode+detector/pmc10108258__ANIE___62___0___s001-63-10-13
Average 90 stars, based on 1 article reviews
si-drift diode detector - by Bioz Stars, 2026-10
90/100 stars

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Article Title: The Fe-V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom.
Article Snippet: Fe Kb X-ray emission was analyzed with a Johann-type spectrometer, using five spherically bent Ge(620) crystals in a Rowland geometry, as described previously,[31] and detected using a deadtime-corrected Ketek Si drift diode detector.

Article Title: The Fe–V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom
Article Snippet: Fe Kb X-ray emission was analyzed with a Johann-type spectrometer, using five spherically bent Ge(620) crystals in a Rowland geometry, as described previously,[31] and detected using a deadtime-corrected Ketek Si drift diode detector.

Article Title: The Fe–V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom
Article Snippet: Fe K β X-ray emission was analyzed with a Johann-type spectrometer, using five spherically bent Ge(620) crystals in a Rowland geometry, as described previously,[ ] and detected using a dead-time-corrected Ketek Si drift diode detector.

Article Title: The Fe–V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom
Article Snippet: Fe Kb X-ray emission was analyzed with a Johann-type spectrometer, using five spherically bent Ge(620) crystals in a Rowland geometry, as described previously,[31] and detected using a deadtime-corrected Ketek Si drift diode detector.

Article Title: Spectroscopic Description of the E1 State of Mo Nitrogenase Based on Mo and Fe X-ray Absorption and Mössbauer Studies
Article Snippet: A 1-m-radius multicrystal Johann-type X-ray spectrometer was used to select the energy of the emitted X-rays and record HERFD XAS data using a dead-time-corrected Ketek Si drift diode detector in a Rowland geometry.

Fluorescence:

Article Title: Thermal Stress Effect on the Structure and Properties of Single and Double Stacked Films of GeTe and SnSe
Article Snippet: The thermal stress effect on the structure of phase change memory materials, namely single films and double stacked films of GeTe and SnSe, is evaluated.. The crystallization temperatures of GeTe and SnSe single films are 138 C and 292 C, respectively.. The films are amorphous before annealing and crystallize in rhombohedral and orthorhombic structures afterwards.

Article Title: Comparative electronic structures of nitrogenase FeMoco and FeVco †Electronic supplementary information (ESI) available: Additional figures and tables, computational data and information. See DOI: 10.1039/c7dt00128b Click here for additional data file.
Article Snippet: .. Kβ fluorescence was analyzed using a Johann-type spectrometer, employing five spherically bent Ge(620) crystals and a dead-time corrected Ketek Si drift diode detector, configured in a Rowland geometry as described previously. ..

Article Title: A three-dimensional view of structural changes caused by deactivation of fluid catalytic cracking catalysts
Article Snippet: .. For microbeam X-ray fluorescence, XRF spectra were collected using a Si drift diode detector (KETEK) and fitted using PyMca . ..



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